IXYX100N120B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYX100N120B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 90 nS
Coesⓘ - Capacitancia de salida, typ: 367 pF
Qgⓘ - Carga total de la puerta, typ: 250 nC
Paquete / Cubierta: PLUS247
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IXYX100N120B3 Datasheet (PDF)
ixyx100n120b3.pdf
Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX
ixyk100n120c3 ixyx100n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous
ixyx100n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247
ixyx100n65b3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M
ixyx100n65c3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65C3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to
Otros transistores... IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , GT30G124 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2