All IGBT. IXYX100N120B3 Datasheet

 

IXYX100N120B3 Datasheet and Replacement


   Type Designator: IXYX100N120B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 225 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 367 pF
   Qg ⓘ - Total Gate Charge, typ: 250 nC
   Package: PLUS247
 

 IXYX100N120B3 substitution

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IXYX100N120B3 Datasheet (PDF)

 ..1. Size:205K  ixys
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IXYX100N120B3

Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX

 3.1. Size:289K  ixys
 ixyk100n120c3 ixyx100n120c3.pdf pdf_icon

IXYX100N120B3

1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

 3.2. Size:201K  ixys
 ixyx100n120c3.pdf pdf_icon

IXYX100N120B3

Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247

 6.1. Size:229K  ixys
 ixyx100n65b3d1.pdf pdf_icon

IXYX100N120B3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M

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Datasheet: IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IRGP4086 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 .

History: APT80GP60JDF3 | IXYT30N450HV | APT80GP60B2

Keywords - IXYX100N120B3 transistor datasheet

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