IXYX100N65C3D1 Todos los transistores

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IXYX100N65C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYX100N65C3D1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 830

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 2.3

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 200

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 42

Capacitancia de salida (Cc), pF: 475

Empaquetado / Estuche: PLUS247

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IXYX100N65C3D1 Datasheet (PDF)

1.1. ixyx100n65c3d1.pdf Size:227K _igbt_a

IXYX100N65C3D1
IXYX100N65C3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1   VCE(sat)    2.3V     tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G C VCGR TJ = 25°C to

1.2. ixyx100n65b3d1.pdf Size:229K _igbt_a

IXYX100N65C3D1
IXYX100N65C3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65B3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65B3D1  VCE(sat)   1.85V   tfi(typ) = 73ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G C VCGR TJ = 25°C to 175°C, RGE = 1M

2.1. ixyx100n120b3.pdf Size:205K _igbt_a

IXYX100N65C3D1
IXYX100N65C3D1

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 ≤ ≤ VCE(sat) ≤ 2.6V ≤ ≤ tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 175°C 1200 V Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V PLUS247 (IX

2.2. ixyx100n120c3.pdf Size:201K _igbt_a

IXYX100N65C3D1
IXYX100N65C3D1

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 ≤ ≤ VCE(sat) ≤ 3.5V ≤ ≤ tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 1200 V E Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V PLUS247

Otros transistores... IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , P12N60C3 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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