All IGBT. IXYX100N65C3D1 Datasheet

 

IXYX100N65C3D1 Datasheet and Replacement


   Type Designator: IXYX100N65C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 475 pF
   Package: PLUS247
 

 IXYX100N65C3D1 substitution

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IXYX100N65C3D1 Datasheet (PDF)

 ..1. Size:227K  ixys
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IXYX100N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65C3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to

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 ixyx100n65b3d1.pdf pdf_icon

IXYX100N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M

 6.1. Size:205K  ixys
 ixyx100n120b3.pdf pdf_icon

IXYX100N65C3D1

Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX

 6.2. Size:289K  ixys
 ixyk100n120c3 ixyx100n120c3.pdf pdf_icon

IXYX100N65C3D1

1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

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Datasheet: IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , FGPF4633 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 .

History: AOT5B65M1 | MMG35HD120XB6TC | RJP60F5DPK | MMG150DR120UZK | APTGT75A120D1 | STGW40H65DFB

Keywords - IXYX100N65C3D1 transistor datasheet

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