IXYH40N65C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYH40N65C3D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.35 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 205 pF
Qgⓘ - Carga total de la puerta, typ: 66 nC
Paquete / Cubierta: TO247
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IXYH40N65C3D1 Datasheet (PDF)
ixyh40n65c3d1.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175
ixyh40n65c3h1.pdf
XPTTM 650V IGBT VCES = 650VIXYH40N65C3H1GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 V
ixyh40n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3GenX3TM IC110 = 40A VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGV
ixyh40n65b3.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingSymbol Test Conditions Maximum Ratings TO-247 (IXYH)VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Con
ixyh40n65b3d1.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,
Otros transistores... IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IHW20N135R5 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2