All IGBT. IXYH40N65C3D1 Datasheet

 

IXYH40N65C3D1 Datasheet and Replacement


   Type Designator: IXYH40N65C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Qg ⓘ - Total Gate Charge, typ: 66 nC
   Package: TO247
 

 IXYH40N65C3D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXYH40N65C3D1 Datasheet (PDF)

 ..1. Size:197K  ixys
 ixyh40n65c3d1.pdf pdf_icon

IXYH40N65C3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175

 3.1. Size:183K  ixys
 ixyh40n65c3h1.pdf pdf_icon

IXYH40N65C3D1

XPTTM 650V IGBT VCES = 650VIXYH40N65C3H1GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 V

 3.2. Size:171K  ixys
 ixyh40n65c3.pdf pdf_icon

IXYH40N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3GenX3TM IC110 = 40A VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGV

 5.1. Size:170K  ixys
 ixyh40n65b3.pdf pdf_icon

IXYH40N65C3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingSymbol Test Conditions Maximum Ratings TO-247 (IXYH)VCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Con

SHOW MORE

Datasheet: IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , SGT40N60FD2PN , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 .

History: IKW50N65WR5 | NGTB15N120IHWG | IXGH40N30BD1

Keywords - IXYH40N65C3D1 transistor datasheet

 IXYH40N65C3D1 cross reference
 IXYH40N65C3D1 equivalent finder
 IXYH40N65C3D1 lookup
 IXYH40N65C3D1 substitution
 IXYH40N65C3D1 replacement

 

 
Back to Top

 


 
.