IXYH40N90C3 Todos los transistores

 ..1. Size:166K  ixys
 ixyh40n90c3.pdf

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3 GenX3TM IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC =

 0.1. Size:184K  ixys
 ixyh40n90c3d1.pdf

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V

 7.1. Size:231K  ixys
 ixyh40n120b3d1.pdf

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC

 7.2. Size:215K  ixys
 ixyh40n120b3.pdf

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3 GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 1200 V E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G = Gate C = Collector VGES Continuous 20 V E = Emitter Tab = C

 7.3. Size:170K  ixys
 ixyh40n65b3.pdf

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65B3 GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol Test Conditions Maximum Ratings TO-247 (IXYH) VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Con

 7.4. Size:252K  ixys
 ixyh40n120c3.pdf

1200V XPTTM IGBT VCES = 1200V IXYH40N120C3 GenX3TM IC110 = 40A VCE(sat) 3.5V tfi(typ) = 50ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transien

 7.5. Size:267K  ixys
 ixyh40n120c3d1.pdf

1200V XPTTM IGBT VCES = 1200V IXYH40N120C3D1 GenX3TM w/ Diode IC90 = 40A VCE(sat) 3.5V tfi(typ) = 50ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGE

 7.6. Size:197K  ixys
 ixyh40n65b3d1.pdf

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65B3D1 GenX3TM w/ Diode IC110 = 40A IXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C,

 7.7. Size:197K  ixys
 ixyh40n65c3d1.pdf

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65C3D1 GenX3TM w/ Diode IC110 = 40A IXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175

 7.8. Size:183K  ixys
 ixyh40n65c3h1.pdf

XPTTM 650V IGBT VCES = 650V IXYH40N65C3H1 GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V

 7.9. Size:171K  ixys
 ixyh40n65c3.pdf

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65C3 GenX3TM IC110 = 40A VCE(sat) 2.35V tfi(typ) = 20ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G V