IXYH40N90C3 Todos los transistores

 

IXYH40N90C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYH40N90C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 600 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 105 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 54 nS

Coesⓘ - Capacitancia de salida, typ: 160 pF

Encapsulados: TO247

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IXYH40N90C3 datasheet

 ..1. Size:166K  ixys
 ixyh40n90c3.pdf pdf_icon

IXYH40N90C3

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3 GenX3TM IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC =

 0.1. Size:184K  ixys
 ixyh40n90c3d1.pdf pdf_icon

IXYH40N90C3

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V

 7.1. Size:231K  ixys
 ixyh40n120b3d1.pdf pdf_icon

IXYH40N90C3

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC

 7.2. Size:215K  ixys
 ixyh40n120b3.pdf pdf_icon

IXYH40N90C3

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3 GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 1200 V E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G = Gate C = Collector VGES Continuous 20 V E = Emitter Tab = C

MOSTRAR MÁS

Otros transistores... IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IHW20N135R5 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 .

 

 

 


 
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