IXYH40N90C3D1 Todos los transistores

 

IXYH40N90C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYH40N90C3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 54 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IXYH40N90C3D1 IGBT

   - Selección ⓘ de transistores por parámetros

 

IXYH40N90C3D1 Datasheet (PDF)

 ..1. Size:184K  ixys
 ixyh40n90c3d1.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH40N90C3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C, RGE = 1M 900 VGVGES Continuous 20 VC TabEVGEM Transient 30 V

 3.1. Size:166K  ixys
 ixyh40n90c3.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH40N90C3GenX3TM IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC =

 7.1. Size:231K  ixys
 ixyh40n120b3d1.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC

 7.2. Size:215K  ixys
 ixyh40n120b3.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsGC TabVCES TJ = 25C to 175C 1200 V EVCGR TJ = 25C to 175C, RGE = 1M 1200 VG = Gate C = CollectorVGES Continuous 20 VE = Emitter Tab = C

MOSTRAR MÁS

Otros transistores... IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , YGW60N65F1A1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 .

History: IGW50N65F5A | NCE100ED65VTP | CRG60T60AK3SD | SRE15N060FSUDE | AOTF10B60D

 

 
Back to Top

 


 
.