All IGBT. IXYH40N90C3D1 Datasheet

 

IXYH40N90C3D1 Datasheet and Replacement


   Type Designator: IXYH40N90C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qg ⓘ - Total Gate Charge, typ: 74 nC
   Package: TO247
 

 IXYH40N90C3D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXYH40N90C3D1 Datasheet (PDF)

 ..1. Size:184K  ixys
 ixyh40n90c3d1.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH40N90C3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C, RGE = 1M 900 VGVGES Continuous 20 VC TabEVGEM Transient 30 V

 3.1. Size:166K  ixys
 ixyh40n90c3.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH40N90C3GenX3TM IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC =

 7.1. Size:231K  ixys
 ixyh40n120b3d1.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC

 7.2. Size:215K  ixys
 ixyh40n120b3.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsGC TabVCES TJ = 25C to 175C 1200 V EVCGR TJ = 25C to 175C, RGE = 1M 1200 VG = Gate C = CollectorVGES Continuous 20 VE = Emitter Tab = C

SHOW MORE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - IXYH40N90C3D1 transistor datasheet

 IXYH40N90C3D1 cross reference
 IXYH40N90C3D1 equivalent finder
 IXYH40N90C3D1 lookup
 IXYH40N90C3D1 substitution
 IXYH40N90C3D1 replacement

 

 
Back to Top

 


 
.