IXYH40N90C3D1 PDF and Equivalents Search

 

IXYH40N90C3D1 Specs and Replacement

Type Designator: IXYH40N90C3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 54 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO247

 IXYH40N90C3D1 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXYH40N90C3D1 datasheet

 ..1. Size:184K  ixys
 ixyh40n90c3d1.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V... See More ⇒

 3.1. Size:166K  ixys
 ixyh40n90c3.pdf pdf_icon

IXYH40N90C3D1

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH40N90C3 GenX3TM IC110 = 40A VCE(sat) 2.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC =... See More ⇒

 7.1. Size:231K  ixys
 ixyh40n120b3d1.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3D1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC ... See More ⇒

 7.2. Size:215K  ixys
 ixyh40n120b3.pdf pdf_icon

IXYH40N90C3D1

1200V XPTTM IGBT VCES = 1200V IXYH40N120B3 GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 1200 V E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G = Gate C = Collector VGES Continuous 20 V E = Emitter Tab = C... See More ⇒

SHOW MORE

Specs: IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , RJH30E2DPP , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 .

Keywords - IXYH40N90C3D1 transistor spec

 IXYH40N90C3D1 cross reference
 IXYH40N90C3D1 equivalent finder
 IXYH40N90C3D1 lookup
 IXYH40N90C3D1 substitution
 IXYH40N90C3D1 replacement

 

 

 


 
↑ Back to Top
.