IXYH50N65C3 Todos los transistores

 

IXYH50N65C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYH50N65C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 600 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 132 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 135 pF

Encapsulados: TO247

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IXYH50N65C3 datasheet

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 ixyh50n65c3.pdf pdf_icon

IXYH50N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA50N65C3 GenX3TM IC110 = 50A IXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3 tfi(typ) = 26ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175

 0.1. Size:251K  ixys
 ixyh50n65c3h1.pdf pdf_icon

IXYH50N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYH50N65C3H1 GenX3TM w/ Sonic IC110 = 50A Diode VCE(sat) 2.10V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1

 0.2. Size:188K  ixys
 ixyh50n65c3d1.pdf pdf_icon

IXYH50N65C3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH50N65C3D1 GenX3TM w/ Diode IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M

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 ixyh50n120c3d1.pdf pdf_icon

IXYH50N65C3

1200V XPTTM IGBT VCES = 1200V IXYH50N120C3D1 GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VG

MOSTRAR MÁS

Otros transistores... IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IKW50N60T , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 .

History: IXYH40N90C3D1

 

 

 


 
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