IXYK120N120B3 Todos los transistores

 

IXYK120N120B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYK120N120B3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 320 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 54 nS

Coesⓘ - Capacitancia de salida, typ: 567 pF

Encapsulados: TO264P

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IXYK120N120B3 datasheet

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IXYK120N120B3

Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYK120N120B3 GenX3TM IC110 = 120A IXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260ns High-Speed IGBT for 10-30 kHz Switching TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G VCGR TJ = 25 C to 175 C, RGE = 1M 120

 3.1. Size:212K  ixys
 ixyk120n120c3 ixyx120n120c3.pdf pdf_icon

IXYK120N120B3

1200V XPTTM IGBTs VCES = 1200V IXYK120N120C3 GenX3TM IC110 = 120A IXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous

 3.2. Size:428K  ixys
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IXYK120N120B3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

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 ixyk140n90c3.pdf pdf_icon

IXYK120N120B3

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYK140N90C3 GenX3TM IC110 = 140A IXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 900 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V PLUS247 (

MOSTRAR MÁS

Otros transistores... IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , SGP30N60 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M .

 

 

 


 
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