IXYK120N120B3 Datasheet. Specs and Replacement
Type Designator: IXYK120N120B3 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 320 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 567 pF
Package: TO264P IXYK120N120B3 Substitution - IGBTⓘ Cross-Reference Search
IXYK120N120B3 datasheet
ixyk120n120b3.pdf
Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYK120N120B3 GenX3TM IC110 = 120A IXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260ns High-Speed IGBT for 10-30 kHz Switching TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G VCGR TJ = 25 C to 175 C, RGE = 1M 120... See More ⇒
ixyk120n120c3 ixyx120n120c3.pdf
1200V XPTTM IGBTs VCES = 1200V IXYK120N120C3 GenX3TM IC110 = 120A IXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous... See More ⇒
ixyk120n120c3.pdf
N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion... See More ⇒
ixyk140n90c3.pdf
Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYK140N90C3 GenX3TM IC110 = 140A IXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 900 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V PLUS247 (... See More ⇒
Specs: IXYH75N65C3, IXYH75N65C3D1, IXYH75N65C3H1, IXYH80N90C3, IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, IXYK100N65C3D1, SGP30N60, IXYK140N90C3, IXYL60N450, IXYP10N65C3, IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1, IXYP15N65C3D1M
Keywords - IXYK120N120B3 transistor spec
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History: APTGF200U120D
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