IXYK140N90C3 Todos los transistores

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IXYK140N90C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYK140N90C3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1630

Tensión colector-emisor (Vce): 900

Voltaje de saturación colector-emisor (Vce sat): 2.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 310

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 86

Capacitancia de salida (Cc), pF: 570

Empaquetado / Estuche: TO264

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IXYK140N90C3 Datasheet (PDF)

1.1. ixyk140n90c3.pdf Size:205K _igbt_a

IXYK140N90C3
IXYK140N90C3

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYK140N90C3 GenX3TM IC110 = 140A IXYX140N90C3 ≤ ≤ VCE(sat) ≤ 2.7V ≤ ≤ tfi(typ) = 105ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 900 V E Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 900 V VGES Continuous ±20 V PLUS247 (

5.1. ixyk100n120c3.pdf Size:200K _ixys

IXYK140N90C3
IXYK140N90C3

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 ≤ ≤ VCE(sat) ≤ 3.5V ≤ ≤ tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 1200 V E Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V PLUS

5.2. ixyk120n120c3.pdf Size:208K _ixys

IXYK140N90C3
IXYK140N90C3

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK120N120C3 GenX3TM IC110 = 120A IXYX120N120C3 ≤ ≤ VCE(sat) ≤ 3.5V ≤ ≤ tfi(typ) = 90ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 1200 V E Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V PLUS

5.3. ixyk120n120b3.pdf Size:164K _igbt_a

IXYK140N90C3
IXYK140N90C3

Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYK120N120B3 GenX3TM IC110 = 120A IXYX120N120B3   VCE(sat)    2.2V     tfi(typ) = 260ns High-Speed IGBT for 10-30 kHz Switching TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 1200 V G VCGR TJ = 25°C to 175°C, RGE = 1M 120

5.4. ixyk100n120c3.pdf Size:428K _igbt_a

IXYK140N90C3
IXYK140N90C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

5.5. ixyk100n120b3.pdf Size:205K _igbt_a

IXYK140N90C3
IXYK140N90C3

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 ≤ ≤ VCE(sat) ≤ 2.6V ≤ ≤ tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 175°C 1200 V Tab VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V PLUS247 (IX

5.6. ixyk100n65b3d1.pdf Size:229K _igbt_a

IXYK140N90C3
IXYK140N90C3

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65B3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65B3D1  VCE(sat)   1.85V   tfi(typ) = 73ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G C VCGR TJ = 25°C to 175°C, RGE = 1M

5.7. ixyk120n120c3.pdf Size:428K _igbt_a

IXYK140N90C3
IXYK140N90C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

5.8. ixyk100n65c3d1.pdf Size:227K _igbt_a

IXYK140N90C3
IXYK140N90C3

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1   VCE(sat)    2.3V     tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G C VCGR TJ = 25°C to

Otros transistores... IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , G30N60C3D , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 .

 


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