IXYK140N90C3 PDF and Equivalents Search

 

IXYK140N90C3 PDF Specs and Replacement


   Type Designator: IXYK140N90C3
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 1630 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 310 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   tr ⓘ - Rise Time, typ: 86 nS
   Coesⓘ - Output Capacitance, typ: 570 pF
   Package: TO264
 

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IXYK140N90C3 PDF specs

 ..1. Size:205K  ixys
 ixyk140n90c3.pdf pdf_icon

IXYK140N90C3

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYK140N90C3 GenX3TM IC110 = 140A IXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 900 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V PLUS247 (... See More ⇒

 9.1. Size:428K  ixys
 ixyk100n120c3.pdf pdf_icon

IXYK140N90C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion... See More ⇒

 9.2. Size:164K  ixys
 ixyk120n120b3.pdf pdf_icon

IXYK140N90C3

Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYK120N120B3 GenX3TM IC110 = 120A IXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260ns High-Speed IGBT for 10-30 kHz Switching TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G VCGR TJ = 25 C to 175 C, RGE = 1M 120... See More ⇒

 9.3. Size:289K  ixys
 ixyk100n120c3 ixyx100n120c3.pdf pdf_icon

IXYK140N90C3

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous ... See More ⇒

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Specs: IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IKW50N60H3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 .

Keywords - IXYK140N90C3 transistor spec

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