IXYP15N65C3D1 Todos los transistores

 

IXYP15N65C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYP15N65C3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 52 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IXYP15N65C3D1 Datasheet (PDF)

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 ixyp15n65c3d1.pdf pdf_icon

IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR

 0.1. Size:195K  ixys
 ixyp15n65c3d1m.pdf pdf_icon

IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab)tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

 3.1. Size:190K  ixys
 ixyp15n65c3.pdf pdf_icon

IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTab

 9.1. Size:217K  ixys
 ixyp10n65c3d1.pdf pdf_icon

IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 7MBR50VW120-50 | KGT15N120NDS | NGTB15N135IHRWG | RGT8NS65D | IXGP24N120C3 | IQGB400N60I4 | FF1200R12KE3

 

 
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