All IGBT. IXYP15N65C3D1 Datasheet

 

IXYP15N65C3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYP15N65C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 52 pF
   Qgⓘ - Total Gate Charge, typ: 19 nC
   Package: TO220

 IXYP15N65C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYP15N65C3D1 Datasheet (PDF)

 ..1. Size:222K  ixys
 ixyp15n65c3d1.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR

 0.1. Size:195K  ixys
 ixyp15n65c3d1m.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab)tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

 3.1. Size:190K  ixys
 ixyp15n65c3.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTab

 9.1. Size:217K  ixys
 ixyp10n65c3d1.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE

 9.2. Size:196K  ixys
 ixyp10n65c3d1m.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1MGenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab)tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

 9.3. Size:214K  ixys
 ixyp10n65c3.pdf

IXYP15N65C3D1 IXYP15N65C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTa

Datasheet: IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IKW50N60T , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 .

 

 
Back to Top