IXGR72N60C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR72N60C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 37 nS
Coesⓘ - Capacitancia de salida, typ: 330 pF
Qgⓘ - Carga total de la puerta, typ: 175 nC
Paquete / Cubierta: ISOPLUS247
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IXGR72N60C3 Datasheet (PDF)
ixgr72n60c3.pdf
Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60C3IC110 = 35A(Electrically Isolated Tab)VCE(sat) 2.7Vtfi(typ) = 55nsHigh-Speed Low-Vsat PT IGBT40-100 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGC Isolated TabVGES Co
ixgr72n60c3d1.pdf
TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25
ixgr72n60a3.pdf
VCES = 600VGenX3TM 600V IGBTIXGR72N60A3IC110 = 52AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingtfi(typ) = 250nsSymbol Test Conditions Maximum RatingsISOPLUS247TM (IXGR)VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 52 AGICM TC
ixgr72n60b3d1.pdf
Preliminary Technical InformationGenX3TM B3-Class VCES = 600VIXGR72N60B3D1IGBT w/Diode IC110 = 40AVCE(sat) 1.80V(Electrically Isolated Back Surface)tfi(typ) = 90nsMedium Speed Low Vsat PT IGBTsfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES
ixgr72n60a3h1.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGR72N60A3H1w/Diode IC110 = 52AVCE(sat) 1.35V(Electrically Isolated Back Surface)tfi(typ) = 250nsUltra-Low Vsat PT IGBT for up to5kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
ixgr72n60b3h1.pdf
Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60B3H1IC110 = 40A(Electrically Isolated Back Surface)VCE(sat) 1.80Vtfi(typ) = 92nsMedium Speed Low Vsat PT IGBTfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continu
Otros transistores... IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , SGP30N60 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2