IXGR72N60C3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGR72N60C3 Specs and Replacement

Type Designator: IXGR72N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 330 pF

Package: ISOPLUS247

IXGR72N60C3 Substitution

- IGBT ⓘ Cross-Reference Search

IXGR72N60C3 datasheet

..1. Size:221K ixys
ixgr72n60c3.pdf pdf_icon

Preliminary Technical Information TM VCES = 600V GenX3 600V IGBT IXGR72N60C3 IC110 = 35A (Electrically Isolated Tab) VCE(sat) 2.7V tfi(typ) = 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C Isolated Tab VGES Co... See More ⇒

0.1. Size:211K ixys
ixgr72n60c3d1.pdf pdf_icon

TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode VCE(sat) 2.7V High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C Isolated Tab E IC25 TC = 25... See More ⇒

5.1. Size:183K ixys
ixgr72n60a3.pdf pdf_icon

VCES = 600V GenX3TM 600V IGBT IXGR72N60A3 IC110 = 52A VCE(sat) 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching tfi(typ) = 250ns Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES TJ = 25 C to 150 C 600 V E153432 VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 110 C 52 A G ICM TC... See More ⇒

5.2. Size:210K ixys
ixgr72n60b3d1.pdf pdf_icon

Preliminary Technical Information GenX3TM B3-Class VCES = 600V IXGR72N60B3D1 IGBT w/Diode IC110 = 40A VCE(sat) 1.80V (Electrically Isolated Back Surface) tfi(typ) = 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES ... See More ⇒