All IGBT. IXGR72N60C3 Datasheet

 

IXGR72N60C3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR72N60C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Qgⓘ - Total Gate Charge, typ: 175 nC
   Package: ISOPLUS247

 IXGR72N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR72N60C3 Datasheet (PDF)

 ..1. Size:221K  ixys
 ixgr72n60c3.pdf

IXGR72N60C3 IXGR72N60C3

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60C3IC110 = 35A(Electrically Isolated Tab)VCE(sat) 2.7Vtfi(typ) = 55nsHigh-Speed Low-Vsat PT IGBT40-100 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGC Isolated TabVGES Co

 0.1. Size:211K  ixys
 ixgr72n60c3d1.pdf

IXGR72N60C3 IXGR72N60C3

TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25

 5.1. Size:183K  ixys
 ixgr72n60a3.pdf

IXGR72N60C3 IXGR72N60C3

VCES = 600VGenX3TM 600V IGBTIXGR72N60A3IC110 = 52AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingtfi(typ) = 250nsSymbol Test Conditions Maximum RatingsISOPLUS247TM (IXGR)VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 52 AGICM TC

 5.2. Size:210K  ixys
 ixgr72n60b3d1.pdf

IXGR72N60C3 IXGR72N60C3

Preliminary Technical InformationGenX3TM B3-Class VCES = 600VIXGR72N60B3D1IGBT w/Diode IC110 = 40AVCE(sat) 1.80V(Electrically Isolated Back Surface)tfi(typ) = 90nsMedium Speed Low Vsat PT IGBTsfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES

 5.3. Size:219K  ixys
 ixgr72n60a3h1.pdf

IXGR72N60C3 IXGR72N60C3

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGR72N60A3H1w/Diode IC110 = 52AVCE(sat) 1.35V(Electrically Isolated Back Surface)tfi(typ) = 250nsUltra-Low Vsat PT IGBT for up to5kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous

 5.4. Size:219K  ixys
 ixgr72n60b3h1.pdf

IXGR72N60C3 IXGR72N60C3

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60B3H1IC110 = 40A(Electrically Isolated Back Surface)VCE(sat) 1.80Vtfi(typ) = 92nsMedium Speed Low Vsat PT IGBTfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continu

Datasheet: IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , SGP30N60 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 .

 

 
Back to Top