IXGT6N170AHV Todos los transistores

 ..1. Size:197K  ixys
 ixgt6n170ahv.pdf

Advance Technical Information High Voltage VCES = 1700V IXGT6N170AHV IC25 = 6A IGBT VCE(sat) 7.0V tfi(typ) = 32ns TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 1700 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Transient 30 V IC25 TC

 4.1. Size:197K  ixys
 ixgt6n170a ixgh6n170a.pdf

VCES = 1700V High Voltage IXGT6N170A IC25 = 6A IGBT IXGH6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 6 A IC110 TC

 4.2. Size:189K  ixys
 ixgt6n170a.pdf

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 6 A

 5.1. Size:181K  ixys
 ixgt6n170 ixgh6n170.pdf

VCES = 1700V High Voltage IXGT6N170 IC90 = 6A IGBT IXGH6N170 VCE(sat) 4.0V tfi(typ) = 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 12 A IC90 TC =

 5.2. Size:78K  ixys
 ixgt6n170.pdf

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C12 A TO-247 AD (IXGH) IC90 TC = 90 C6 A ICM TC = 25 C, 1 ms 24 A SSOA