IXGT6N170AHV PDF and Equivalents Search

 

IXGT6N170AHV Specs and Replacement

Type Designator: IXGT6N170AHV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 7 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 20 pF

Package: TO268

 IXGT6N170AHV Substitution

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IXGT6N170AHV datasheet

 ..1. Size:197K  ixys
ixgt6n170ahv.pdf pdf_icon

IXGT6N170AHV

Advance Technical Information High Voltage VCES = 1700V IXGT6N170AHV IC25 = 6A IGBT VCE(sat) 7.0V tfi(typ) = 32ns TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 1700 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Transient 30 V IC25 TC... See More ⇒

 4.1. Size:197K  ixys
ixgt6n170a ixgh6n170a.pdf pdf_icon

IXGT6N170AHV

VCES = 1700V High Voltage IXGT6N170A IC25 = 6A IGBT IXGH6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 6 A IC110 TC ... See More ⇒

 4.2. Size:189K  ixys
ixgt6n170a.pdf pdf_icon

IXGT6N170AHV

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A VCE(sat) 7.0V tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G C C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C 6 A... See More ⇒

 5.1. Size:181K  ixys
ixgt6n170 ixgh6n170.pdf pdf_icon

IXGT6N170AHV

VCES = 1700V High Voltage IXGT6N170 IC90 = 6A IGBT IXGH6N170 VCE(sat) 4.0V tfi(typ) = 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 1700 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 12 A IC90 TC =... See More ⇒

Specs: IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , TGAN60N60F2DS , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 .

History: RGT8BM65D

Keywords - IXGT6N170AHV transistor spec

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