HGTP10N40F1D Todos los transistores

 

HGTP10N40F1D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTP10N40F1D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 75 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

HGTP10N40F1D Datasheet (PDF)

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HGTP10N40F1D

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HGTP10N40F1D

HGTP10N40F1D,S E M I C O N D U C T O RHGTP10N50F1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V Latch Free OperationEMITTER Typical Fall Time

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HGTP10N40F1D

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HGTP10N40F1D

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

MOSTRAR MÁS

Otros transistores... HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , FGPF4536 , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTM12N50C1 , HGTM12N50E1 .

History: SKM200GAL123DKLD110 | GT20G101

 

 
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