RJP4007ANS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJP4007ANS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(PULSE) A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.5 V @25℃
Encapsulados: VSON8
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RJP4007ANS datasheet
rjp4007ans.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjp4009ans.pdf
Preliminary Datasheet RJP4009ANS R07DS0370EJ0200 Rev.2.00 Nch IGBT for Strobe Flash Apr 27, 2011 Features Small surface mount package (VSON-8) VCES 400 V ICM 150 A @Tc = 70 C, CM = 400 F Drive voltage 2.5 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code PVSN0008JA-A (Package name VSON-8) 8 7 5 6 5 1, 2, 3
rjp4010age.pdf
Preliminary Datasheet RJP4010AGE R07DS0371EJ0400 Rev.4.00 400V, 150A, IGBT for Strobe Flash Dec 28, 2012 Features Ultra small surface mount package (TSOJ-8) VCES 400 V ICM 150 A @VGE = 3 V, Tc = 70 C, CM = 100 F Drive voltage 3.0 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code PTSJ0008JA-A (Package name TSOJ-8) 8 7 6
Otros transistores... RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , GT30J124 , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF .
History: HIA20N60BP
History: HIA20N60BP
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