RJP4007ANS IGBT. Datasheet pdf. Equivalent
Type Designator: RJP4007ANS
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic|ⓘ - Maximum Collector Current: 150(PULSE) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: VSON8
RJP4007ANS Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJP4007ANS Datasheet (PDF)
rjp4007ans.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjp4009ans.pdf
Preliminary Datasheet RJP4009ANS R07DS0370EJ0200Rev.2.00Nch IGBT for Strobe Flash Apr 27, 2011Features Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70C, CM = 400 F Drive voltage: 2.5 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JA-A(Package name: VSON-8)8 75 6 51, 2, 3 :
rjp4010age.pdf
Preliminary Datasheet RJP4010AGE R07DS0371EJ0400Rev.4.00400V, 150A, IGBT for Strobe Flash Dec 28, 2012Features Ultra small surface mount package (TSOJ-8) VCES: 400 V ICM: 150 A @VGE = 3 V, Tc = 70C, CM = 100 F Drive voltage: 3.0 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PTSJ0008JA-A(Package name: TSOJ-8)8 7 6
Datasheet: RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , FGH40N60SFD , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF .
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