APT100GN120JDQ4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT100GN120JDQ4  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 446 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 153 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 365 pF

Encapsulados: SOT227

  📄📄 Copiar 

 Búsqueda de reemplazo de APT100GN120JDQ4 IGBT

- Selecciónⓘ de transistores por parámetros

 

APT100GN120JDQ4 datasheet

 0.1. Size:181K  microsemi
 apt100gn120jdq4.pdf pdf_icon

APT100GN120JDQ4

APT100GN120JDQ4 1200V, 100A, VCE(ON) = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 2.1. Size:413K  apt
 apt100gn120j.pdf pdf_icon

APT100GN120JDQ4

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 3.1. Size:133K  microsemi
 apt100gn120b2g.pdf pdf_icon

APT100GN120JDQ4

TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum T-Max conduction loss. Easy paralleling is a result of very tight parameter d

MOSTRAR MÁS

Otros transistores... HIA20N60BP, HIA30N60BP, HIH20N60BP, HIH25N120TN, HIH30N120TF, HIH30N60BP, HIL40N120TF, HIL40N120VF, FGPF4536, APT100GT60JR, APT12GT60KRG, APT13GP120BDQ1G, APT150GN120JDQ4, APT150GT120JR, APT15GN120KG, APT15GP60BG, APT15GP60S