All IGBT. APT100GN120JDQ4 Datasheet

 

APT100GN120JDQ4 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT100GN120JDQ4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 446 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 153 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 365 pF
   Qgⓘ - Total Gate Charge, typ: 540 nC
   Package: SOT227

 APT100GN120JDQ4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT100GN120JDQ4 Datasheet (PDF)

 0.1. Size:181K  microsemi
 apt100gn120jdq4.pdf

APT100GN120JDQ4 APT100GN120JDQ4

APT100GN120JDQ41200V, 100A, VCE(ON) = 1.7V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 2.1. Size:413K  apt
 apt100gn120j.pdf

APT100GN120JDQ4 APT100GN120JDQ4

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 3.1. Size:133K  microsemi
 apt100gn120b2g.pdf

APT100GN120JDQ4 APT100GN120JDQ4

TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2APT100GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum T-Maxconduction loss. Easy paralleling is a result of very tight parameter d

Datasheet: HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , CRG40T60AN3H , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S .

 

 
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