APT150GN120JDQ4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT150GN120JDQ4
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 215 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 500 pF
Encapsulados: SOT227
Búsqueda de reemplazo de APT150GN120JDQ4 IGBT
- Selección ⓘ de transistores por parámetros
APT150GN120JDQ4 datasheet
apt150gn120jdq4.pdf
APT150GN120JDQ4 1200V, 150A, VCE(ON) = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor
apt150gn120j.pdf
TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in
apt150gn60jdq4.pdf
TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
apt150gn60j.pdf
TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
Otros transistores... HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , CRG60T60AN3H , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G .
History: APT40GR120S
History: APT40GR120S
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent