All IGBT. APT150GN120JDQ4 Datasheet

 

APT150GN120JDQ4 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT150GN120JDQ4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 215 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Qgⓘ - Total Gate Charge, typ: 800 nC
   Package: SOT227

 APT150GN120JDQ4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT150GN120JDQ4 Datasheet (PDF)

 0.1. Size:195K  microsemi
 apt150gn120jdq4.pdf

APT150GN120JDQ4 APT150GN120JDQ4

APT150GN120JDQ41200V, 150A, VCE(ON) = 3.2V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 2.1. Size:418K  apt
 apt150gn120j.pdf

APT150GN120JDQ4 APT150GN120JDQ4

TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 6.1. Size:534K  apt
 apt150gn60jdq4.pdf

APT150GN120JDQ4 APT150GN120JDQ4

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 6.2. Size:483K  apt
 apt150gn60j.pdf

APT150GN120JDQ4 APT150GN120JDQ4

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 6.3. Size:168K  microsemi
 apt150gn60b2g.pdf

APT150GN120JDQ4 APT150GN120JDQ4

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

 6.4. Size:235K  microsemi
 apt150gn60ldq4g.pdf

APT150GN120JDQ4 APT150GN120JDQ4

600V APT150GN60LDQ4(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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