APT15GP60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT15GP60S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 210 pF
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT15GP60S - IGBT
APT15GP60S Datasheet (PDF)
apt15gp60s.pdf
APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20
apt15gp60bsc.pdf
TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper
apt15gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
apt15gp60b.pdf
APT15GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge
apt15gp60bdf1.pdf
APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge
apt15gp60bdq1.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
apt15gp60kg.pdf
APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge
apt15gp60k.pdf
APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge
apt15gp60bg.pdf
APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20
apt15gp60bdlg.pdf
APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat
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