APT15GP60S Spec and Replacement, IGBT Equivalent Finder, Cross Reference

APT15GP60S Specs and Replacement

Type Designator: APT15GP60S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 56 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: D3PAK

APT15GP60S Substitution

- IGBT ⓘ Cross-Reference Search

APT15GP60S datasheet

..1. Size:265K microsemi
apt15gp60s.pdf pdf_icon

APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20... See More ⇒

5.1. Size:211K apt
apt15gp60bsc.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz oper... See More ⇒

5.2. Size:1026K apt
apt15gp60bdq1g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope... See More ⇒

5.3. Size:86K apt
apt15gp60b.pdf pdf_icon