APT15GP90BDQ1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT15GP90BDQ1G  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 43 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.9 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO247

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APT15GP90BDQ1G datasheet

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 apt15gp90bdq1g.pdf pdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

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APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 4.1. Size:160K  apt
 apt15gp90b.pdf pdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation

 4.2. Size:401K  apt
 apt15gp90bg.pdf pdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p

MOSTRAR MÁS

Otros transistores... APT100GT60JR, APT12GT60KRG, APT13GP120BDQ1G, APT150GN120JDQ4, APT150GT120JR, APT15GN120KG, APT15GP60BG, APT15GP60S, RJP30E2DPP-M0, APT15GT60KRG, APT25GP90BDQ1G, APT30GN60BDQ2G, APT30GP60BDQ1G, APT30GT60KRG, APT35GN120SG, APT35GP120B2DQ2G, APT40GR120B