APT15GP90BDQ1G - аналоги и описание IGBT

 

APT15GP90BDQ1G - аналоги, основные параметры, даташиты

Наименование: APT15GP90BDQ1G

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 43 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.9 V @25℃

tr ⓘ - Время нарастания типовое: 14 nS

Coesⓘ - Выходная емкость, типовая: 120 pF

Тип корпуса: TO247

 Аналог (замена) для APT15GP90BDQ1G

- подбор ⓘ IGBT транзистора по параметрам

 

APT15GP90BDQ1G даташит

 ..1. Size:424K  apt
apt15gp90bdq1g.pdfpdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:191K  apt
apt15gp90bdf1.pdfpdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 4.1. Size:160K  apt
apt15gp90b.pdfpdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation

 4.2. Size:401K  apt
apt15gp90bg.pdfpdf_icon

APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p

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History: APT15GN120KG

 

 

 


 
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