Справочник IGBT. APT15GP90BDQ1G

 

APT15GP90BDQ1G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT15GP90BDQ1G
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 43 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 14 nS
   Coesⓘ - Выходная емкость, типовая: 120 pF
   Qgⓘ - Общий заряд затвора, typ: 60 nC
   Тип корпуса: TO247

 Аналог (замена) для APT15GP90BDQ1G

 

 

APT15GP90BDQ1G Datasheet (PDF)

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 apt15gp90bdq1g.pdf

APT15GP90BDQ1G APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:191K  apt
 apt15gp90bdf1.pdf

APT15GP90BDQ1G APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BDF1APT15GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 4.1. Size:160K  apt
 apt15gp90b.pdf

APT15GP90BDQ1G APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90BAPT15GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation

 4.2. Size:401K  apt
 apt15gp90bg.pdf

APT15GP90BDQ1G APT15GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p

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