APT35GN120SG Todos los transistores

 

APT35GN120SG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT35GN120SG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 379 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 94 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Qgⓘ - Carga total de la puerta, typ: 220 nC
   Paquete / Cubierta: TO268AB
     - Selección de transistores por parámetros

 

APT35GN120SG Datasheet (PDF)

 ..1. Size:142K  microsemi
 apt35gn120sg.pdf pdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle

 4.1. Size:237K  apt
 apt35gn120l2dq2g.pdf pdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

 4.2. Size:180K  apt
 apt35gn120b.pdf pdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120BAPT35GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

 4.3. Size:142K  microsemi
 apt35gn120bg.pdf pdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle

MOSTRAR MÁS

Otros transistores... APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , IRGP4063D , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG .

History: IKFW50N60DH3E | IXGT50N60B | APT35GP120B2DQ2G | 1MB05-120 | SGP40N60UF | APT68GA60LD40

 

 
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