APT35GN120SG - аналоги и описание IGBT

 

APT35GN120SG - аналоги, основные параметры, даташиты

Наименование: APT35GN120SG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 379 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 94 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

tr ⓘ - Время нарастания типовое: 22 nS

Coesⓘ - Выходная емкость, типовая: 150 pF

Тип корпуса: TO268AB

 Аналог (замена) для APT35GN120SG

- подбор ⓘ IGBT транзистора по параметрам

 

APT35GN120SG даташит

 ..1. Size:142K  microsemi
apt35gn120sg.pdfpdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle

 4.1. Size:237K  apt
apt35gn120l2dq2g.pdfpdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result

 4.2. Size:180K  apt
apt35gn120b.pdfpdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120B 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

 4.3. Size:142K  microsemi
apt35gn120bg.pdfpdf_icon

APT35GN120SG

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle

Другие IGBT... APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , IRG7IC28U , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG .

 

 

 


 
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