APT35GP120B2DQ2G Todos los transistores

 

APT35GP120B2DQ2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT35GP120B2DQ2G
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 543 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 96 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Paquete / Cubierta: TO247
 

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APT35GP120B2DQ2G PDF specs

 0.1. Size:419K  apt
 apt35gp120b2dq2g.pdf pdf_icon

APT35GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi... See More ⇒

 1.1. Size:194K  apt
 apt35gp120b2df2.pdf pdf_icon

APT35GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100... See More ⇒

 3.1. Size:85K  apt
 apt35gp120b.pdf pdf_icon

APT35GP120B2DQ2G

APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge ... See More ⇒

 3.2. Size:257K  microsemi
 apt35gp120bg.pdf pdf_icon

APT35GP120B2DQ2G

APT35GP120B APT35GP120BG *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C Low Conduction ... See More ⇒

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Otros transistores... APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , G50T65D , APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G .

 

 
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