APT35GP120B2DQ2G Datasheet. Specs and Replacement

Type Designator: APT35GP120B2DQ2G  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 543 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 96 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Qg ⓘ - Total Gate Charge, typ: 150 nC

Package: TO247

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APT35GP120B2DQ2G datasheet

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APT35GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi... See More ⇒

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APT35GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100... See More ⇒

 3.1. Size:85K  apt
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APT35GP120B2DQ2G

APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge ... See More ⇒

 3.2. Size:257K  microsemi
 apt35gp120bg.pdf pdf_icon

APT35GP120B2DQ2G

APT35GP120B APT35GP120BG *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E C Low Conduction ... See More ⇒

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Specs: APT15GP60S, APT15GP90BDQ1G, APT15GT60KRG, APT25GP90BDQ1G, APT30GN60BDQ2G, APT30GP60BDQ1G, APT30GT60KRG, APT35GN120SG, SGT40N60FD2PN, APT40GR120B, APT40GR120S, APT44GA60BD30C, APT44GA60SD30C, APT50GF120B2RG, APT50GF120JRDQ3, APT50GF120LRG, APT50GP60B2DQ2G

Keywords - APT35GP120B2DQ2G transistor spec

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