APT50GP60B2DQ2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT50GP60B2DQ2G Datasheet (PDF)

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TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

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TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

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APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge

4.2. Size:96K apt
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APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

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