APT50GP60B2DQ2G Todos los transistores

 

APT50GP60B2DQ2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT50GP60B2DQ2G
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 465 pF
   Qgⓘ - Carga total de la puerta, typ: 165 nC
   Paquete / Cubierta: TO247
 

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APT50GP60B2DQ2G Datasheet (PDF)

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 apt50gp60b2dq2g.pdf pdf_icon

APT50GP60B2DQ2G

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 2.1. Size:196K  apt
 apt50gp60b2df2.pdf pdf_icon

APT50GP60B2DQ2G

TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

 4.1. Size:88K  apt
 apt50gp60b.pdf pdf_icon

APT50GP60B2DQ2G

APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge

 4.2. Size:96K  apt
 apt50gp60bg.pdf pdf_icon

APT50GP60B2DQ2G

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

MOSTRAR MÁS

Otros transistores... APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , YGW60N65F1A1 , APT50GP60LDLG , APT50GT120B2RDLG , APT50GT120LRDQ2G , APT65GP60B2G , APT65GP60JDQ2 , APT75GN120JDQ3 , APT75GN60BDQ2G , APT75GN60LDQ3G .

History: HGTG10N120BN | CT25ASJ-8 | GT25H101

 

 
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