APT75GN60BDQ2G Todos los transistores

 

APT75GN60BDQ2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT75GN60BDQ2G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 536 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 155 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 48 nS

Coesⓘ - Capacitancia de salida, typ: 370 pF

Encapsulados: TO247

 Búsqueda de reemplazo de APT75GN60BDQ2G IGBT

- Selección ⓘ de transistores por parámetros

 

APT75GN60BDQ2G datasheet

 ..1. Size:212K  microsemi
 apt75gn60bdq2g.pdf pdf_icon

APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result

 4.1. Size:399K  apt
 apt75gn60bg.pdf pdf_icon

APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.1. Size:436K  apt
 apt75gn60ldq3g.pdf pdf_icon

APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parameter

 5.2. Size:212K  microsemi
 apt75gn60sdq2g.pdf pdf_icon

APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result

MOSTRAR MÁS

Otros transistores... APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG , APT50GT120B2RDLG , APT50GT120LRDQ2G , APT65GP60B2G , APT65GP60JDQ2 , APT75GN120JDQ3 , CRG15T120BNR3S , APT75GN60LDQ3G , APT75GN60SDQ2G , APT75GT120JRDQ3 , ART10U120 , ART20U120 , ART30U120 , ART40U120 , ART45U120SPEC .

History: APT50GT120B2RDLG | APT75GN120JDQ3

 

 

 


 
↑ Back to Top
.