All IGBT. APT75GN60BDQ2G Datasheet

 

APT75GN60BDQ2G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT75GN60BDQ2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 536 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 155 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Qgⓘ - Total Gate Charge, typ: 485 nC
   Package: TO247

 APT75GN60BDQ2G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT75GN60BDQ2G Datasheet (PDF)

 ..1. Size:212K  microsemi
apt75gn60bdq2g.pdf

APT75GN60BDQ2G
APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result

 4.1. Size:399K  apt
apt75gn60bg.pdf

APT75GN60BDQ2G
APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.1. Size:436K  apt
apt75gn60ldq3g.pdf

APT75GN60BDQ2G
APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parameter

 5.2. Size:212K  microsemi
apt75gn60sdq2g.pdf

APT75GN60BDQ2G
APT75GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G)600V APT75GN60BDQ2 APT75GN60SDQ2APT75GN60BDQ2G* APT75GN60SDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B)conduction loss. Easy paralleling is a result

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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