SKM150GB12T4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM150GB12T4G
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 223
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 38
Capacitancia de salida (Cc), typ, pF: 580
Carga total de la puerta (Qg), typ, nC: 850
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de SKM150GB12T4G - IGBT
SKM150GB12T4G Datasheet (PDF)
skm150gb12t4g.pdf
SKM150GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 223 ATj = 175 CTc =80C 172 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 183 ATj = 175 CSKM150GB12T4GTc =80
skm150gb12t4.pdf
SKM150GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12T4Tc =80C
skm150gb125d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesUltra Fast IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 150 GB 125 DIC Tcase = 25/80 C 150 / 100 4) AICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) APreliminary Data 5)VGES 20 VPtot per IGBT, Tcase = 25 C 1040 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 400
skm150gb12v.pdf
SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom
skm150gb12vg.pdf
SKM150GB12VGAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 222 ATj = 175 CTc =80C 169 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 187 ATj = 175 CSKM150GB12VGTc =80C 140 AIFno
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ