SKM150GM12T4G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM150GM12T4G
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 229 A
Tjⓘ -
Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 42 nS
Coesⓘ - Capacitancia de salida, typ: 580 pF
Encapsulados: MODULE
Búsqueda de reemplazo de SKM150GM12T4G IGBT
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SKM150GM12T4G datasheet
7.1. Size:529K semikron
skm150gal12v.pdf 

SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAL12V Tc =80 C 141 A IFno
7.3. Size:142K semikron
skm150gb125d.pdf 

SEMITRANS M Absolute Maximum Ratings Values Ultra Fast IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 150 GB 125 D IC Tcase = 25/80 C 150 / 100 4) A ICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) A Preliminary Data 5) VGES 20 V Ptot per IGBT, Tcase = 25 C 1040 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 400
7.5. Size:491K semikron
skm150gb12v.pdf 

SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12V Tc =80 C 141 A IFnom
7.7. Size:457K semikron
skm150gb12t4.pdf 

SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12T4 Tc =80 C
7.8. Size:110K semikron
skm150gb174d.pdf 

SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 150 GB 174 D IC; ICN Tcase = 25/60 C 180 / 150 A ICM Tcase = 25/60 C; tp = 1 ms 360 / 300 A VGES 20 V Preliminary Data Ptot per IGBT, Tcase = 25 C 1080 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4) 3400 V humidity DIN 40 040
7.9. Size:435K semikron
skm150gb12vg.pdf 

SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 222 A Tj = 175 C Tc =80 C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 187 A Tj = 175 C SKM150GB12VG Tc =80 C 140 A IFno
7.10. Size:401K semikron
skm150gb12t4g.pdf 

SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 223 A Tj = 175 C Tc =80 C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 183 A Tj = 175 C SKM150GB12T4G Tc =80
7.11. Size:514K semikron
skm150gar12t4.pdf 

SKM150GAR12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAR12T4 Tc =80
7.13. Size:729K semikron
skm150gal12t4.pdf 

SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAL12T4
Otros transistores... SKM145GB176D
, SKM150GAL12T4
, SKM150GAL12V
, SKM150GAR12T4
, SKM150GB12T4
, SKM150GB12T4G
, SKM150GB12V
, SKM150GB12VG
, AOK40B65H2AL
, SML50HB06
, SPM1001
, SPM1002
, SPM1003
, SPM1004
, SPM1005
, SPM1006
, SSM20G45EGH
.