SKM150GM12T4G - аналоги, параметры транзистора

..1. Size:376K semikron
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7.1. Size:529K semikron
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SKM150GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAL12V Tc =80 C 141 A IFno

7.2. Size:700K semikron
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7.3. Size:142K semikron
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SEMITRANS M Absolute Maximum Ratings Values Ultra Fast IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 150 GB 125 D IC Tcase = 25/80 C 150 / 100 4) A ICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) A Preliminary Data 5) VGES 20 V Ptot per IGBT, Tcase = 25 C 1040 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 400

7.4. Size:706K semikron
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7.5. Size:491K semikron
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SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12V Tc =80 C 141 A IFnom

7.6. Size:599K semikron
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7.7. Size:457K semikron
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SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12T4 Tc =80 C

7.8. Size:110K semikron
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SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 150 GB 174 D IC; ICN Tcase = 25/60 C 180 / 150 A ICM Tcase = 25/60 C; tp = 1 ms 360 / 300 A VGES 20 V Preliminary Data Ptot per IGBT, Tcase = 25 C 1080 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4) 3400 V humidity DIN 40 040

7.9. Size:435K semikron
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SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 222 A Tj = 175 C Tc =80 C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 187 A Tj = 175 C SKM150GB12VG Tc =80 C 140 A IFno

7.10. Size:401K semikron
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SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 223 A Tj = 175 C Tc =80 C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 183 A Tj = 175 C SKM150GB12T4G Tc =80

7.11. Size:514K semikron
skm150gar12t4.pdf pdf_icon

SKM150GAR12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAR12T4 Tc =80

7.12. Size:703K semikron
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7.13. Size:729K semikron
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SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GAL12T4

7.14. Size:702K semikron
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