SML50HB06 Todos los transistores

 

SML50HB06 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML50HB06

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 280 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 9 nS

Encapsulados: MODULE

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SML50HB06 datasheet

 ..1. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML50HB06

SML50HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 A rent Total PowerDissipation Tc=25C Ptot 280 W Gate-emitte

 8.1. Size:26K  semelab
sml50h19.pdf pdf_icon

SML50HB06

SML50H19 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 500V ID(cont) 18.5A RDS(on) 0.260 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower

 8.2. Size:26K  semelab
sml50h24.pdf pdf_icon

SML50HB06

SML50H24 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 500V ID(cont) 24A RDS(on) 0.190 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML50HB06

SML50A19 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 18.5A 3 (case) RDS(on) 0.240 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1

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