SML50HB06 Todos los transistores

 

SML50HB06 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML50HB06
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 280 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 9 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

SML50HB06 Datasheet (PDF)

 ..1. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML50HB06

SML50HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 VVce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 Arent Total PowerDissipation Tc=25C Ptot 280 WGate-emitte

 8.1. Size:26K  semelab
sml50h19.pdf pdf_icon

SML50HB06

SML50H19TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 500VID(cont) 18.5ARDS(on) 0.2605.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower

 8.2. Size:26K  semelab
sml50h24.pdf pdf_icon

SML50HB06

SML50H24TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 500VID(cont) 24ARDS(on) 0.1905.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML50HB06

SML50A19TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 18.5A3(case)RDS(on) 0.2403.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: APTGF100A120T | BRG10N120D | STGW35NB60SD | MGB15N40CL | IXGH10N60A | 2MBI300NB-060 | AOTF5B65M1

 

 
Back to Top

 


 
.