SML50HB06 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SML50HB06
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 280 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 9 nS
Тип корпуса: MODULE
SML50HB06 Datasheet (PDF)
sml50hb06.pdf
SML50HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 VVce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 Arent Total PowerDissipation Tc=25C Ptot 280 WGate-emitte
sml50h19.pdf
SML50H19TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 500VID(cont) 18.5ARDS(on) 0.2605.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower
sml50h24.pdf
SML50H24TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 500VID(cont) 24ARDS(on) 0.1905.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le
sml50a19.pdf
SML50A19TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 18.5A3(case)RDS(on) 0.2403.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml50b26.pdf
SML50B26TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 26A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.2002.21
sml50b26f.pdf
SML50B26FTO247AD Package Outline.Dimensions in mm (inches)NCHANNEL4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)ENHANCEMENT MODE2.49 (0.098)HIGH VOLTAGEPOWER FREDFET3.55 (0.140)3.81 (0.150)VDSS 500V1 2 31.65 (0.065)2.13 (0.084)0.40 (0.016) ID(cont) 26A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040) RDS(on) 0.2001.40 (0.
sml50s30.pdf
SML50S30D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
sml50b30.pdf
SML50B30TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 30A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.1702.21
sml50a23.pdf
SML50A23TO3 Package Outline.NCHANNELDimensions in mm (inches)ENHANCEMENT MODE25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)HIGH VOLTAGE10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 23ARDS(on) 0.203(case)3.84 (0.151)4.09 (0.161) Faster Switching7.92 (0.312)12.70 (0.50) Lower Leakage TO
sml5020bn.pdf
SML5020BNSEMELAB4TH GENERATION MOSFETTO247AD Package Outline.Dimensions in mm (inches)NCHANNEL4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)0.79 (0.031) 2.87 (0.113)3.12 (0.123)ID(cont) 28.0A1.01 (0
sml50a15.pdf
SML50A15TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 14.7A3(case)RDS(on) 0.3003.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml50j44f.pdf
SML50J44FSOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)NCHANNEL31.5 (1.240)31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 4 ENHANCEMENT MODE4.3 (0.169 )(4 places)4.8 (0.187)H =4.9 (0.193)HIGH VOLTAGE1 2(4 places)RPOWER FREDFET4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml50w40.pdf
SML50W40TO267 Package Outline.Dimensions in mm (inches)NCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 500VID(cont) 40ARDS(on) 0.120 Faster Switching Lower Leakage TO267 Hermetic PackageDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincreases
sml50j44.pdf
SML50J44SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V
sml50l37.pdf
SML50L37TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 500V1 2 32.29 (0.090)ID(cont) 37A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.1400.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml50s26.pdf
SML50S26D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
sml50j50.pdf
SML50J50SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V
sml50b20.pdf
SML50B20TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 20A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.2802.21
sml50l47.pdf
SML50L47TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 500V1 2 32.29 (0.090)ID(cont) 47A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.1000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml50b22.pdf
SML50B22TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 22A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.2402.21
sml50j10ru2.pdf
SML50J10RU2SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml50a21.pdf
SML50A21TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 21A3(case)RDS(on) 0.2203.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml50l47f.pdf
SML50L47TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 500V1 2 32.29 (0.090)ID(cont) 44A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.1000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml50c15.pdf
SML50C15TO254 Package Outline.Dimensions in mm (inches)13.59 (0.535) 6.32 (0.249)NCHANNEL13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 500V1 2 3ID(cont) 15ARDS(on) 0.2700.89 (0.035) Faster Switching1.14 (0.045)3.81 (0.150)3.81 (0.150) BSC Lower LeakageBSC
sml50t47.pdf
SML50T47T247clipPackage Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 500V1 2 32.87 (0.113)ID(cont) 47A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.1001.01 (0.040)1.40 (0.055)
Другие IGBT... SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , SKM150GB12T4 , SKM150GB12T4G , SKM150GB12V , SKM150GB12VG , SKM150GM12T4G , FGL60N100BNTD , SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2