VS-20MT120UFP Todos los transistores

 

VS-20MT120UFP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-20MT120UFP
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 240 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.29 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 344 pF
   Paquete / Cubierta: MODULE
 

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VS-20MT120UFP Datasheet (PDF)

 ..1. Size:263K  vishay
 vs-20mt120ufp.pdf pdf_icon

VS-20MT120UFP

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s

 2.1. Size:220K  vishay
 vs-20mt120ufapbf.pdf pdf_icon

VS-20MT120UFP

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low

Otros transistores... SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , NCE80TD65BT , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S .

 

 
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