VS-20MT120UFP Datasheet and Replacement
Type Designator: VS-20MT120UFP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 240 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.29 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 344 pF
Package: MODULE
- IGBT Cross-Reference
VS-20MT120UFP Datasheet (PDF)
vs-20mt120ufp.pdf

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s
vs-20mt120ufapbf.pdf

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 6MBI75VA-060-50 | CM200EXS-34SA | IXYX120N120B3 | 2MBI900VXA-120P-50 | BT15T60A8F | STGBL6NC60D | IQGB300N120I4
Keywords - VS-20MT120UFP transistor datasheet
VS-20MT120UFP cross reference
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History: 6MBI75VA-060-50 | CM200EXS-34SA | IXYX120N120B3 | 2MBI900VXA-120P-50 | BT15T60A8F | STGBL6NC60D | IQGB300N120I4



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