1MBH50D-060 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1MBH50D-060
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 310 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 82 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 600 nS
Coesⓘ - Capacitancia de salida, typ: 650 pF
Paquete / Cubierta: TO3PL
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1MBH50D-060 Datasheet (PDF)
1mbh50d-060.pdf

1MBH50-060,1MBH50D-060,Molded IGBT600V / 50AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schemati
1mbh50-060.pdf

1MBH50-060,1MBH50D-060,Molded IGBT600V / 50AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schemati
Otros transistores... 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , CRG15T120BNR3S , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 .
History: GT15Q101 | IRG4BC30F | AFGB40T65SQDN | IXSN35N120AU1 | IXBF20N300 | GT30J322 | MSG15T120FPE
History: GT15Q101 | IRG4BC30F | AFGB40T65SQDN | IXSN35N120AU1 | IXBF20N300 | GT30J322 | MSG15T120FPE



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