1MBH50D-060 Specs and Replacement
Type Designator: 1MBH50D-060
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 82 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
tr ⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 650 pF
Package: TO3PL
1MBH50D-060 Substitution - IGBT ⓘ Cross-Reference Search
1MBH50D-060 datasheet
1mbh50d-060.pdf
1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schemati... See More ⇒
1mbh50-060.pdf
1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schemati... See More ⇒
Specs: 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , IRGP4086 , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 .
Keywords - 1MBH50D-060 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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