ISL9V3040D3S Todos los transistores

 

ISL9V3040D3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISL9V3040D3S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: TO252AA
     - Selección de transistores por parámetros

 

ISL9V3040D3S Datasheet (PDF)

 ..1. Size:191K  fairchild semi
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ISL9V3040D3S

April 2003ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBTFormerly Developmental Type 49362General DescriptionThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, andApplicationsISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition Coi

 ..2. Size:473K  onsemi
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf pdf_icon

ISL9V3040D3S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:4020K  onsemi
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ISL9V3040D3S

DATA SHEETwww.onsemi.comECOSPARK) Ignition IGBTCOLLECTOR300 mJ, 400 V, N-Channel Ignition IGBTR1GATEISL9V3040D3S,R2ISL9V3040S3S,ISL9V3040P3 EMITTERGeneral DescriptionThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are thenext generation ignition IGBTs that offer outstanding SCIS capabilityin the space saving D-Pak (TO-252), as well as the industry standardD2-Pak (T

 0.1. Size:3115K  onsemi
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ISL9V3040D3S

ISL9V3040x3ST-F085CEcoSPARK) Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drivewww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coi

Otros transistores... VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , FGH40N60UFD , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N .

History: APTGF50A120T | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | IRG4BC30UD | IKW50N65WR5 | MMG15CB120XB6TC

 

 
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