ISL9V3040D3S Даташит. Аналоги. Параметры и характеристики.
Наименование: ISL9V3040D3S
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 430 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 21 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: TO252AA
- подбор IGBT транзистора по параметрам
ISL9V3040D3S Datasheet (PDF)
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf

April 2003ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBTFormerly Developmental Type 49362General DescriptionThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, andApplicationsISL9V3040S3 are the next generation ignition IGBTs that offeroutstanding SCIS capability in the space saving D-Pak (TO-252), as Automotive Ignition Coi
isl9v3040d3s isl9v3040s3s isl9v3040p3 isl9v3040s3.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
isl9v3040d3s isl9v3040s3s isl9v3040p3.pdf

DATA SHEETwww.onsemi.comECOSPARK) Ignition IGBTCOLLECTOR300 mJ, 400 V, N-Channel Ignition IGBTR1GATEISL9V3040D3S,R2ISL9V3040S3S,ISL9V3040P3 EMITTERGeneral DescriptionThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are thenext generation ignition IGBTs that offer outstanding SCIS capabilityin the space saving D-Pak (TO-252), as well as the industry standardD2-Pak (T
isl9v3040d3st-f085c isl9v3040s3st-f085c.pdf

ISL9V3040x3ST-F085CEcoSPARK) Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drivewww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1 High Current Ignition SystemGATE Coi
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG600K120U6TN | XD040Q120AT1S3 | APTGT100A120D1 | MMG100S060B6TC | 2MBI150VA-120-50 | 2MBI150PC-140 | SKM50GAL12T4
History: MMG600K120U6TN | XD040Q120AT1S3 | APTGT100A120D1 | MMG100S060B6TC | 2MBI150VA-120-50 | 2MBI150PC-140 | SKM50GAL12T4



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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