DM2G200SH6N Todos los transistores

 

DM2G200SH6N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DM2G200SH6N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 695 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 120 nS

Encapsulados: MODULE

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DM2G200SH6N datasheet

 ..1. Size:305K  dawin
dm2g200sh6n.pdf pdf_icon

DM2G200SH6N

D WTM D WTM DM2G200SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive

 4.1. Size:523K  dawin
dm2g200sh6a.pdf pdf_icon

DM2G200SH6N

D WTM D WTM DM2G200SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

 5.1. Size:198K  dawin
dm2g200sh12ae.pdf pdf_icon

DM2G200SH6N

Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G200SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

 5.2. Size:66K  dawin
dm2g200sh12a.pdf pdf_icon

DM2G200SH6N

Preliminary D WTM D WTM Mar. 2008 DM2G200SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste

Otros transistores... ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , IXGH60N60 , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 .

History: DM2G300SH6A

 

 

 


 
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